منابع مشابه
Low Dielectric Materials for Microelectronics
Over the past half century, low dielectric materials have been intensively researched by ceramic and polymer scientists. However, these materials possess a vast myriad of electrical, thermal, chemical, and mechanical properties that are just as crucial as the name that classifies them. Therefore, in many cases, the applications of low dielectric constant materials are dictated by these other pr...
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Intralevel Time Dependent Dielectric Breakdown (TDDB) was studied in interdigitated comb structures comprised of standard Cu metallization and a low-k interlevel dielectric. The failure distribution was found to be best represented as being lognormal with sigma increasing as the field decreased. Kinetic studies revealed an exponential dependence on the electric field that fits 1/E closer than –...
متن کاملLow-k Materials: Recent Advances
From a historical point of view, the search for new low-k and ultra-low-k materials has always been dictated by industrial needs, resulting in a strong connection between fundamental research and technology. Although a variety of potential candidates has been reported in the literature during the past decade, integration is the deciding factor driving the selection of the most promising materia...
متن کاملProbing wire bond issues for bonding over Cu/low-K dielectric materials
OVERVIEW: The introduction of low-k and ultralow-k dielectric films in copper-interconnect structures presents serious challenges in test, assembly, and packaging of advanced devices. Low-k films support higher circuit speeds and enable smaller feature sizes by increasing the insulation capability around copper interconnects, but compared to previous generations of silicon-dioxide dielectric la...
متن کاملEffect of Via Separation and Low-k Dielectric Materials on the Thermal Characteristics of Cu Interconnects
This paper reports the impact of vias on the spatial distribution of temperature rise in metal lines and shows that the temperature is highly dependent on the via separation. A 3-D electro-thermal simulation methodology using a short-pulse stress is presented to evaluate interconnect design options from a thermal point of view. The simulation methodology has also been applied to quantify the us...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2004
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(03)00052-x